论文标题
Dysco3上Laino3的吸附控制等离子体辅助分子束（110）：生长窗口，应变松弛和域模式
Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
论文作者
论文摘要
我们通过吸附控制的等离子体辅助分子束外延（PA-MBE）在Dysco3（110）底物上的外延LAINO3（110）底物的生长。使用视线四极杆质谱法监测吸附控制的生长。在MBE（Tombe）图的热力学中，发现实验生长窗口比预测的明显窄。我们发现，使用静脉内分析，我们发现Laino3层（晶格不匹配$ \ $ -4 $ \％$）的应变松弛的临界厚度为1 nm。底物和薄膜具有正交晶体结构，可以通过伪立方体晶格近似。 X射线划分（XRD）分析揭示了Laino3膜与Dysco3底物的伪立方体的伪立方体外延关系。通过透射电子显微镜（TEM）证实了这种关系，这进一步解决了旋转原骨域的存在 - 其中大多数与基板的C轴相连。拉曼光谱进一步证实了Laino3层的存在。我们的发现开辟了使用BASNO3在MBE生长的异质面上的二维电子气体的可能性。
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental growth window was found to be significantly narrower than the predicted one. We found the critical thickness for strain relaxation of the LaInO3 layer (lattice mismatch $\approx$ -4$\%$) to be of 1 nm using in-situ RHEED analysis. Substrate and film possess an orthorhombic crystal structure which can be approximated by a pseudo-cubic lattice. X-ray-diffraction (XRD) analysis revealed the pseudo-cube-on-pseudo-cube epitaxial relationship ofthe LaInO3 films to the DyScO3 substrates. This relation was confirmed by transmission electron microscopy (TEM), which further resolved the presence of rotational orthorhombic domains - the majority of which have coinciding c-axis with that of the substrate. Raman spectroscopy further confirmed the presence of a LaInO3 layer. Our findings open up the possibility for 2-dimensional electron gases at the MBE-grown heterointerface with BaSnO3.
