论文标题
V $ _2^0 $在中子辐照硅中使用光子吸收测量的研究
Study of the V$_2^0$ state in neutron-irradiated silicon using photon-absorption measurements
论文作者
论文摘要
$ n $ -type硅具有3.5 k $ω\ cdot $ cm电阻率已被反应堆中子对（1、5和10）$ \ times 10^{16} $ cm $ $^{ - 2} $辐射。使用光传输测量，已经确定了光子能量的吸收系数，即$e_γ$，用于辐照样品的0.62至1.30 eV，并在15分钟后的等温退火后，温度在80°C和330°C之间。辐射诱导的吸收系数$α_\ Mathit {Irr} $是通过减去非辐照硅的吸收系数而获得的。 $α__\ Mathit {Irr} $的$e_γ$依赖性显示了一个共振峰，该峰归因于中性的剥夺，v $ _2^0 $，坐在背景上，$α__\ mathit {irriT {irr}（e_γ）$由Breit-Wigner-Wigner Line-wigner Line-nigner Line-wigner Line-line-line to parameter-abercter-abercter-abercameter-embacked-agarneter-abercametiles paramitive sorge。发现在210°C的退火温度下，V $ _2^0 $强度降低了因子2，并且在MEV水平，拟合的Breit-Wigner的位置和宽度不会随照射剂量和退火而变化。
Pieces of $n$-type silicon with 3.5 k$Ω\cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been determined for photon energies, $E_γ$, between 0.62 and 1.30 eV for the samples as irradiated and after 15 min isochronal annealing with temperatures between 80°C and 330°C. The radiation-induced absorption coefficient, $α_\mathit{irr}$, has been obtained by subtracting the absorption coefficient for non-irradiated silicon. The $E_γ$-dependence of $α_\mathit{irr}$ shows a resonance peak, which is ascribed to the neutral divacancy, V$_2^0$, sitting on a background, and $α_\mathit{irr} (E_γ)$ is fitted by a Breit-Wigner line shape on a parameterized background. It is found that at an annealing temperature of 210°C the V$_2^0$ intensity is reduced by a factor 2, and that at the meV level, the position and the width of the fitted Breit-Wigner do not change with irradiation dose and annealing.
