论文标题
rubium浓缩离子束诱导铂沉积
Rubidium Focused Ion Beam Induced Platinum Deposition
论文作者
论文摘要
这项工作列出了使用rubidium和炮离子同时表征铂的焦距诱导沉积（Fibid）。在类似的光束能量下，RB $^+$的8.5 keV和8.0 keV for ga $^+$，而光线电流接近10 pa，两个离子物种以相似的速率沉积了PT膜。能量分散性X射线光谱表明，RB $^+$ fibid-pt由类似的PT含量组成，其主要离子含量（5％RB和27％GA）比GA $^+$ fibid-pt组成。对于RB $^+$ fibid-pt，沉积材料的电阻率为$ 8.1 \ times 10^4 $ $ $ $ $ \ mathrm {μΩ\ cdot cm} $，对于Ga $ $ fibid-ppt。
This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Under similar beam energies, 8.5 keV for Rb$^+$ and 8.0 keV for Ga$^+$, and beam current near 10 pA, the two ion species deposited Pt films at similar rates. Energy-dispersive x-ray spectroscopy shows that the Rb$^+$ FIBID-Pt consists of similar Pt contents with much lower primary ion contents (5% Rb and 27% Ga) than the Ga$^+$ FIBID-Pt. The deposited material was also measured to have a resistivity of $8.1\times 10^4$ $\mathrm{μΩ\cdot cm}$ for the Rb$^+$ FIBID-Pt and $5.7\times 10^3$ $\mathrm{μΩ\cdot cm}$ for the Ga$^+$ FIBID-Pt.
