论文标题
对高$ Q $ 4H-SIC微孔子的电气效应的调查
Investigation of the electro-optic effect in high-$Q$ 4H-SiC microresonators
论文作者
论文摘要
由于其独特的材料特性，碳化硅（SIC）最近成为一种有希望的光子和量子材料。在这里，我们对高质量因子4H-SIC微孔子中的电形效应进行了探索性研究。我们的发现首次证实了4H-SIC中的Pockels效应。提取的Pockels系数显示出来自不同制造商的4H-SIC晶片的某些变化，$ r_ {13} $和$ r_ {33} $的幅度分别在（0.3-0.7）PM/V和（0-0.0.03）PM/V范围内。
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. Here, we carry out an exploratory investigation of the electro-optic effect in high-quality-factor 4H-SiC microresonators. Our findings confirm the existence of the Pockels effect in 4H-SiC for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of $r_{13}$ and $r_{33}$ estimated to be in the range of (0.3-0.7) pm/V and (0-0.03) pm/V, respectively.
