论文标题
通过调节van霍夫奇异性，调整2H-Tase2中的超导性和电荷密度波顺序
Tuning Superconductivity and Charge Density Wave Order in 2H-TaSe2 by Modulating the Van Hove Singularity
论文作者
论文摘要
诱变型（Tase2）是一种令人兴奋的材料，它具有电荷密度波顺序（CDW）和超导性。因此，提供一个竞争环境，用于检查材料中基本电子量子状态的相互作用。最近的研究表明，通过将van霍夫奇点（VHS）与费米水平对齐，可以改善Tase2晶格中的固有量子电子状态。在这项研究中，我们尝试调整Tase2中的VHS，以通过将PT代替PT代替TA原子，通过电子掺杂在费米水平的附近将它们对齐。在研究PT0.2TA0.8SE2的频带结构时，电子掺杂使VHS靠近K高对称点附近的费米水平附近。结果，原始Tase2中的CDW状态在Tase2掺杂系统中被抑制，同时还托管了增强的超导温度（TC）约为2.7K。这些观察结果提供了对在材料中利用VHS来调整其电子特性的VHS的洞察力。
Tantalum diselenide (TaSe2) is an exciting material that hosts charge density wave order (CDW) and superconductivity. Thus, providing a playing field for examining the interactions of fundamental electronic quantum states in materials. Recent research has proposed that the intrinsic quantum electronic state in the TaSe2 lattice could be improved by aligning the Van Hove singularity (VHs) with the Fermi level. In this study, we attempt to tune the VHs in TaSe2 to align them within the vicinity of the Fermi level via electron doping by chemically substituting Pt for Ta atoms. On investigating the band structure of Pt0.2Ta0.8Se2, the electron doping brought the VHs closer to the Fermi level vicinity around the K high symmetry point. As a result, the CDW state in pristine TaSe2 is suppressed in the TaSe2 doped system while also hosting an enhanced superconducting temperature (Tc) of ~2.7 K. These observations provide insight into ways to leverage the VHs in materials to tune their electronic properties.
