论文标题
单个ER $^{3+} $ ion的光电离检测，并分辨率为100-ns
Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution
论文作者
论文摘要
有效检测固体中的单个光学中心对于量子信息处理，传感和单光子生成应用至关重要。在这项工作中，我们使用射频（RF）反射仪来检测SI中的单个ER $^{3+} $ ion引起的光电离。 RF反射法的高带宽和灵敏度为光离检测提供了亚100-ns的时间分辨率。使用此技术，首次测量了Si Nano-Transistor中单个ER $^{3+} $ ion的光学激发状态寿命，为0.49 $ \ pm $ 0.04 $μ$ s。我们的结果表明，一种有效的方法来检测因ER激发和放松引起的电荷状态变化。这种方法可用于快速读取固体中其他单个光学中心，并且由于使用频率多路复用技术证明的多通道RF反射仪，对大规模集成的光学量子系统具有吸引力。
Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.
