论文标题

单个ER $^{3+} $ ion的光电离检测,并分辨率为100-ns

Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution

论文作者

Zhang, Yangbo, Fan, Wenda, Yang, Jiliang, Guan, Hao, Zhang, Qi, Qin, Xi, Duan, Changkui, de Boo, Gabriele G., Johnson, Brett C., McCallum, Jeffrey C., Sellars, Matthew J., Rogge, Sven, Yin, Chunming, Du, Jiangfeng

论文摘要

有效检测固体中的单个光学中心对于量子信息处理,传感和单光子生成应用至关重要。在这项工作中,我们使用射频(RF)反射仪来检测SI中的单个ER $^{3+} $ ion引起的光电离。 RF反射法的高带宽和灵敏度为光离检测提供了亚100-ns的时间分辨率。使用此技术,首次测量了Si Nano-Transistor中单个ER $^{3+} $ ion的光学激发状态寿命,为0.49 $ \ pm $ 0.04 $μ$ s。我们的结果表明,一种有效的方法来检测因ER激发和放松引起的电荷状态变化。这种方法可用于快速读取固体中其他单个光学中心,并且由于使用频率多路复用技术证明的多通道RF反射仪,对大规模集成的光学量子系统具有吸引力。

Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

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