论文标题
sc $ _ {\ boldsymbol {\ MathSf {x}}} $ al $ _ {\ boldsymbol {\ boldsymbol {\ Mathsf {\ Mathsf {1-x}} $ n层在GAN（0001）上生长的分子epitaxy在GAN（0001）上生长的晶格参数。
Lattice parameters of Sc$_{\boldsymbol{\mathsf{x}}}$Al$_{\boldsymbol{\mathsf{1-x}}}$N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
论文作者
论文摘要
对新硝酸盐SC $ _ \ textIt {x} $ al $ _ \ textit {1-x} $ n的晶格参数的准确了解对于理解该化合物的弹性和压电性能以及能够在其在异性结构中加工其应变状态的能力。使用高分辨率的X射线衍射测定法，我们确定100 nm厚的未掺杂的SC $ _ \ textIt {x} $ al $ _ \ textit {1-x} $ n层在GAN（0001）模板上由等体辅助分子分子束在GAN（0001）上生长的晶格参数。层的SC内容$ \ textit {x} $由X射线光电子光谱和能量分散性X射线光谱独立测量，范围从0到0.25。图层的平面内晶格参数随着$ \ textit {x} $的增加而线性增加，而其平面晶格参数则保持恒定。发现具有$ \ textit {x} $ $ \ $ 0.09的图层被发现与GAN匹配，从而产生光滑的表面和与GAN底层的结构完美。此外，在SC $ _ \ textIt {x} $ al $ _ \ textit {1-x} $ n/gan heterointerface中诱导了二维电子气体，其纸电子密度和移动性最高。
An accurate knowledge of the lattice parameters of the new nitride Sc$_\textit{x}$Al$_\textit{1-x}$N is essential for understanding the elastic and piezoelectric properties of this compound as well as for the ability to engineer its strain state in heterostructures. Using high-resolution x-ray diffractometry, we determine the lattice parameters of 100-nm-thick undoped Sc$_\textit{x}$Al$_\textit{1-x}$N layers grown on GaN(0001) templates by plasma-assisted molecular beam epitaxy. The Sc content $\textit{x}$ of the layers is measured independently by both x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy and ranges from 0 to 0.25. The in-plane lattice parameter of the layers linearly increases with increasing $\textit{x}$, while their out-of-plane lattice parameter remains constant. Layers with $\textit{x}$ $\approx$ 0.09 are found to be lattice matched to GaN, resulting in a smooth surface and a structural perfection equivalent to that of the GaN underlayer. In addition, a two-dimensional electron gas is induced at the Sc$_\textit{x}$Al$_\textit{1-x}$N/GaN heterointerface, with the highest sheet electron density and mobility observed for lattice-matched conditions.
