论文标题
高上临界场（120 t），具有高氢化为Smfeaso外延膜的小各向异性
High upper critical field (120 T) with small anisotropy of highly hydrogen-substituted SmFeAsO epitaxial film
论文作者
论文摘要
在高磁场下研究了具有高临界温度（TC = 45 K）的高度氢化成分的1111型Smfeaso外延膜的电子传输性能。通过使用最大生成130 t的单转磁体，我们澄清说，smfeaso0.65H0.35的上部临界场（μ0HC2）在几乎低温的极限为2.2 k的μ0H||时为120 t。 ab。 μ0HC2的角度依赖性表明，TC周围的各向异性参数（γ）为〜2，与实用的候选122型BAFE2AS2相当，其TC较低，并且比F-substited Smfeaso的TC较低，并且小得多。小γ主要起源于高氢掺入。极高的μ0HC2和小γ以及高临界电流密度以及高临界电流密度，表明SMFEASO1-XHX对于超导电磁体和电缆具有很高的潜力。
The electronic transport properties of a highly hydrogen-substituted 1111-type SmFeAsO epitaxial film with high critical-temperature (Tc = 45 K) were investigated under high magnetic fields. By using a single-turn magnet generating up to 130 T, we clarified that the upper critical field (μ0Hc2) of SmFeAsO0.65H0.35 is 120 T at the nearly low-temperature limit of 2.2 K for μ0H || ab. The angular dependence of μ0Hc2 revealed that the anisotropic parameter (γ) around Tc is ~2, which is comparable with that of a practical candidate 122-type BaFe2As2 with lower Tc and much smaller than that of F-substituted SmFeAsO. The small γ mainly originates from the high hydrogen incorporation. The extremely high μ0Hc2 and small γ, together with the high Tc and high critical current density, suggest that SmFeAsO1-xHx has high potential for the superconducting electromagnets and cables.
