论文标题
使用外电压的半导体薄膜中的反向掺杂不对称
Reverse Doping Asymmetry in Semiconductor Thin Films Using External Voltage
论文作者
论文摘要
掺杂不对称性是一种具有半导体的显着现象，并且是一个特别长期的挑战，限制了最宽带的半导体的应用，这些宽带半导体的应用是由于其极端带边缘而自发的重型N或P型掺杂的固有的。从理论上讲，这项研究表明，通过在其生长或掺杂过程中对材料上的适当外部电压应用，我们可以在很大程度上调整带边缘，从而逆转半导体薄膜中的掺杂不对称性。我们将氧化锌作为试金石，并在计算上表明，这种电压辅助掺杂方法有效地抑制了自发的N型缺陷，在三个不同的生长条件下，大约四个阶，并成功地产生了P-type氧化锌氧化锌，直至最低的受体水平。所提出的方法对材料，生长条件或缺陷起源不敏感，因此为半导体薄膜中的掺杂不对称提供了一般的解决方案。
Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of their extreme band edges. This study theoretically shows that by applying a proper external voltage on materials during their growth or doping processes, we can largely tune the band edges and consequently reverse the doping asymmetry in semiconductor thin films. We take zinc oxide as a touchstone and computationally demonstrate that this voltage-assisted-doping approach efficiently suppresses the spontaneous n-type defects by around four orders under three distinct growth conditions and successfully generates p-type zinc oxide up to the lowest acceptor levels. The proposed approach is insensitive to materials, growth conditions, or defects origins, and thus offers a general solution to the doping asymmetry in semiconductor thin films.
