论文标题
宽光谱范围SIPM的辐射硬度，具有准球形连接
Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction
论文作者
论文摘要
新的像素几何形状正在上升，以实现具有硅光电倍增体（SIPM）的近红外波长的高灵敏度。我们测试了尖端雪崩光合二极管的原型，该图具有准静态P-N结和较高的光谱效率，并在广泛的光谱范围内进行了高光反射效率，并分析了中子照射后的性能。观察到的暗计数速率的增加明显小于具有常规设计的SIPM，表明像素几何形状的辐射硬度良好。
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photodetection efficiency over a wide spectral range, and analyze the performance after neutron irradiation. The observed increase in dark count rate is significantly smaller than for a SiPM with a conventional design, indicating a good radiation hardness of the pixel geometry.
