论文标题
电子传输在Weyl半法中具有均匀浓度的扭转位错的电子传输
Electronic transport in Weyl semimetals with a uniform concentration of torsional dislocations
论文作者
论文摘要
在本文中，我们考虑了在存在稀释的均匀扭转位错浓度的均匀浓度下的I型Weyl半准型的理论模型。通过对T-Matrix的局部波散射（相移）的数学分析，我们获得了相应的智障和高级绿色的功能，其中包括与随机分布的多个散射事件的效果。将这种分析与久保形式主义相结合，包括顶点校正，我们计算了电子电导率作为温度和位错浓度的函数。我们进一步评估我们的分析公式，以预测几种过渡金属单核（即TAAS，TAP，NBA和NBP）的电导率。
In this article, we consider a theoretical model for a type I Weyl semimetal, under the presence of a diluted uniform concentration of torsional dislocations. By a mathematical analysis for partial wave scattering (phase-shift) for the T-matrix, we obtain the corresponding retarded and advanced Green's functions that include the effects of multiple scattering events with the ensemble of randomly distributed dislocations. Combining this analysis with the Kubo formalism, and including vertex corrections, we calculate the electronic conductivity as a function of temperature and concentration of dislocations. We further evaluate our analytical formulas to predict the electrical conductivity of several transition metal monopnictides, i.e. TaAs, TaP, NbAs and NbP.
