论文标题
栅极定义的二维孔和电子系统在未稳定的INSB量子井中
Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
论文作者
论文摘要
量子传输测量在未稳定的INSB量子井中以栅极定义的高质量，二维孔和电子系统进行。对于这两种极性，载体系统都显示出从弱反定位测量值中提取的可调节自旋轨道相互作用。根据Shubnikov-de Haas振荡的温度依赖性，有效的INSB孔的有效质量随载体密度强烈增加。进行倾斜磁场中的巧合测量值以估计INSB二维孔系统的自旋敏感性。二维孔系统的G因子随着载体密度的增加而迅速降低。
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.
