论文标题
多效薄膜中多状态极化切换的确定性操纵
Deterministic manipulation of multi-state polarization switching in multiferroic thin films
论文作者
论文摘要
铁电材料中可确定性控制的多状态极化有望用于应用下一代非挥发性多状态内存设备。但是，选择性控制开关途径的挑战抑制了多状态极化的实现。在这里，我们报告了一种方法，可以通过在多效性BifeO3薄膜中与定期订购的71°结构域壁组合组合外电场和平板内尾场，从而选择性控制71°铁弹性和180°铁电开关路径。可以通过精确选择不同的开关路径来确定性地实现四州极化状态。我们的研究揭示了获得多个极化状态以实现多状态记忆和基于磁耦合的设备的能力。
Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71° ferroelastic and 180° ferroelectric switching paths by combining the out-of-plane electric field and in-plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71° domain wall. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. Our studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling based devices.
