论文标题
由超快THZ激发驱动的低波段隙半导体的影响电离：超越弹道制度
Impact ionization in low-band-gap semiconductors driven by ultrafast THz excitation: beyond the ballistic regime
论文作者
论文摘要
使用二维THZ光谱与数值模型结合使用，我们研究了与低间隙半导体INSB的高视野THZ激发引起的载体乘法相关的动力学。除了先前观察到的与准球载体动力学连接的动力学外，我们还观察到我们归因于60 kV/cm高的峰场电离的其他光谱和时间特征，这些峰值磁场的电离磁场持续到430 kV/cm的最大研究峰场。在最高场上，我们估计由于影响电离引起的载体乘法因子大于10，这是通过对我们已经开发的影响电离过程的数值仿真来得到的。
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously observed dynamics connected with quasi-ballistic carrier dynamics, we observe other spectral and temporal features that we attribute to impact ionization for peak fields above 60 kV/cm, which continue up to the maximum investigated peak field of 430 kV/cm. At the highest fields we estimate a carrier multiplication factor greater than 10 due to impact ionization, which is well-reproduced by a numerical simulation of the impact ionization process which we have developed.
