论文标题

Valleytronic完整配置交流方法:Si双点量子的激发光谱的应用

Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits

论文作者

Yannouleas, Constantine, Landman, Uzi

论文摘要

强烈的电子电子相互作用和Wigner-MoLecule(WM)形成对$ 2E $ singlet-triplet双点Si Qubits的光谱的影响,基于完整的配置交互(FCI)方法,在连续(有效质量)的材料的上下文中融合了Valley的自由度(VDOF)。除了常规旋转外,我们的FCI将VDOF视为Isospin。我们的治疗能够为量子谱的每个能量曲线分配一组旋转和山谷同胞素的良好量子数。这揭示了基础SU(4)$ \ supset $ su(2)$ \ times $ su(2)在SI双点光谱中。在实际实验情况范围内的参数中,我们以双点零件的形式证明,在(2,0)充电配置中,并将预期的大,点尺寸确定的单粒子(轨道)能量差距进行了比较,强大的$ e-e-e $互动极大地消除了Spinlet $ - $ SING-SINGLET $ - $ spin-spin-triplet Energy $ $ e $ e__________________________________________________它与两个山谷之间的小能源差距($ e_v $)有竞争力。我们介绍了$ e _ {\ rm st} <e_v $和$ e _ {\ rm st}> e_v $案例的结果。我们研究了光谱是引起解剖的函数,并证明了由于降低了交叉屏障和/或山谷 - 轨耦合的影响,因此避免过境点的加强。我们进一步证明,作为施加磁场的函数,由于自旋 - 瓦利耦合而导致的(1,1)电荷构型中避免过境。在此制定的Valleytronic FCI,并针对限制在可调双量子点的两个电子中实施,还提供了一种最有效的工具,用于分析具有两个以上井和/或超过两个电子的Si Qubits光谱。

The influence of strong electron-electron interactions and Wigner-molecule (WM) formation on the spectra of $2e$ singlet-triplet double-dot Si qubits is presented based on a full configuration interaction (FCI) approach that incorporates the valley degree of freedom (VDOF) in the context of the continuous (effective mass) description of semiconductor materials. Our FCI treats the VDOF as an isospin in addition to the regular spin. Our treatment is able to assign to each energy curve in the qubit's spectrum a complete set of good quantum numbers for both the spin and the valley isospin. This reveals an underlying SU(4) $\supset$ SU(2) $\times$ SU(2) group-chain organization in the Si double-dot spectra. With parameters in the range of actual experimental situations, we demonstrate in a double-dot qubit that, in the (2,0) charge configuration and compared to the expected large, and dot-size determined, single-particle (orbital) energy gap, the strong $e-e$ interactions drastically quench the spin-singlet$-$spin-triplet energy gap, $E_{\rm ST}$, within the same valley, making it competitive to the small energy gap, $E_V$, between the two valleys. We present results for both the $E_{\rm ST} < E_V$ and $E_{\rm ST} > E_V$ cases. We investigate the spectra as a function of detuning and demonstrate the strengthening of the avoided crossings due to a lowering of the interdot barrier and/or the influence of valley-orbit coupling. We further demonstrate, as a function of an applied magnetic field, the emergence of avoided crossings in the (1,1) charge configuration due to the spin-valley coupling. The valleytronic FCI formulated here, and implementeded for two electrons confined in a tunable double quantum dot, offers also a most effective tool for analyzing the spectra of Si qubits with more than two wells and/or more than two electrons.

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