论文标题
电场和磁场中平面锗孔量子位的建模
Modelling of planar germanium hole qubits in electric and magnetic fields
论文作者
论文摘要
紧张的平面锗量子井中的基于孔的旋转矩阵由于其有利的特性和显着的实验进步,因此受到了相当大的关注。该结构中的较大自旋轨道相互作用允许与电场有效地进行量子操作。但是,它也将Qubit耦合到电噪声。在这项工作中,我们对托有这些孔旋转的异质结构进行模拟。我们解决了现实的异质结构的有效质量方程,提供了一组分析基础波函数,并计算了重孔基态的有效G因子。我们的研究揭示了位于G因子孔孔外的高度激发光孔状态的强烈影响。我们发现,对于平面外磁场而言,甜蜜的斑点,最不容易受到电荷噪声的操作点被转移到不切实际的大电场。但是,对于接近面内对齐的磁场,低电场处的部分甜点被回收。此外,在某些情况下,对于不同的磁场比对,就可以找到相对于多个波动电荷陷阱的甜点。这项工作将有助于理解和改善锗孔旋转吨的连贯性。
Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favourable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for efficient qubit operations with electric fields. However, it also couples the qubit to electrical noise. In this work, we perform simulations of a heterostructure hosting these hole spin qubits. We solve the effective mass equations for a realistic heterostructure, provide a set of analytical basis wave functions, and compute the effective g-factor of the heavy-hole ground-state. Our investigations reveal a strong impact of highly excited light-hole states located outside the quantum well on the g-factor. We find that sweet spots, points of operations that are least susceptible to charge noise, for out-of-plane magnetic fields are shifted to impractically large electric fields. However, for magnetic fields close to in-plane alignment, partial sweet spots at low electric fields are recovered. Furthermore, sweet spots with respect to multiple fluctuating charge traps can be found under certain circumstances for different magnetic field alignments. This work will be helpful in understanding and improving coherence of germanium hole spin qubits.