论文标题
金属卤化物钙钛矿量子点中的全配置缺陷量捕获的电荷载体量子
Charge carriers trapping by the full-configuration defects in metal halide perovskites quantum dots
论文作者
论文摘要
金属卤化物钙钛矿量子点（MHPQD）在光伏和光电上引起了巨大的有趣，因为它们具有出色的特性和尺寸特性。但是，如何系统地分析荷缺陷捕获的电荷载体仍然是一项挑战任务的关键问题之一。在这里，我们研究了基于众所周知的Huang-Rhys模型在MHPQD中被各种缺陷捕获的电荷载体捕获的非放射多发性过程，在该模型中，通过在量子缺陷模型中引入局部化参数，开发出具有可变depth和lattice弛豫强度的不同缺陷缺陷的方法，其中包括具有可变depth和lattice弛豫强度的不同缺陷物种。在这种方法的帮助下，发现了从量子点基态转移到不同缺陷的电荷载体最快的捕获通道。此外，给出了诱捕时间对量子点半径，缺陷深度和温度的依赖性。这些结果不仅通过缺陷丰富了电荷载体捕获过程的知识，还启发了基于MHPQD的光伏和光电设备的设计。
Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interesting in the photovoltaic and photoelectric because of their marvelous properties and size characteristics. However, one of key problems that how to systematically analyze charge carriers trapping by different defects is still a challenge task. Here, we study nonradiation multiphonon processes of the charge carrier trapping by various defects in MHPQDs based on the well-known Huang-Rhys model, in which a method of fullconfiguration defect, including different defect species with variable depth and lattice relaxation strength, is developed by introducing a localization parameter in the quantum defect model. With the help of this method, these fastest trapping channels for charge carriers transferring from the quantum dot ground state to different defects are found. Furthermore, the dependences of the trapping time on the radius of quantum dot, the defect depth and temperature are given. These results not only enrich the knowledge of charge carrier trapping processes by defects, but enlighten the designs of MHPQDs-based photovoltaic and photoelectric devices.
