论文标题
在室温铁磁半导体循环单层中增强的居里温度和天际稳定性
Enhanced Curie temperature and skyrmion stability in room temperature ferromagnetic semiconductor CrISe monolayer
论文作者
论文摘要
我们报告了Crise单层作为室温铁磁性半导体，其温度（$ T_C $），磁动率能量（MAE）和带隙分别为322 K，113 $ $ $ $ EV和0.67 eV。 $ t_c $和MAE可以进一步增强385 K和313 $ $ $ $ EV的EV。更有趣的是，可以通过压缩应变在平面和平面内切换磁性轴。特别是，由于反转对称性断裂和SE原子的强自旋轨道耦合，因此获得了2.40 MeV的大型Dzyaloshinskii-Moriya相互作用（DMI）。更重要的是，通过微磁模拟，稳定的Skyrmions具有低于10 nm半径的稳定的天空均通过室温高于室温的大型DMI稳定，从$ -2 \％$ $ $ $ $ $ 6 \％$ $。我们的工作表明Crise是下一代基于Skyrmion的信息存储设备的有前途的候选人，并为在室温铁电磁半导体中研究DMI和Skyrmions提供了指导。
We report CrISe monolayer as a room temperature ferromagnetic semiconductor with the Curie temperature ($T_C$), magnetic anisotropy energy (MAE) and band gap being 322 K, 113 $μ$eV and 0.67 eV, respectively. The $T_C$ and MAE can be further enhanced up to 385 K and 313 $μ$eV by tensile strain. More interestingly, the magnetic easy axis can be switched between off-plane and in-plane by compressive strain. Particularly, due to the broken inversion symmetry and strong spin-orbit coupling of Se atoms, a large Dzyaloshinskii-Moriya interaction (DMI) of 2.40 meV is obtained. More importantly, by micromagnetic simulations, stable skyrmions with sub-10 nm radius are stabilized by the large DMI above room temperature in a wide range of strain from $-2\%$ to $6\%$. Our work demonstrates CrISe as a promising candidate for next-generation skyrmion-based information storage devices and provides guidance for the research of DMI and skyrmions in room temperature ferromagnetic semiconductors.
