论文标题
高性能深脉冲光电检测的微米厚的氧化甲壳膜中的定向载体传输
Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection
论文作者
论文摘要
将新兴的超级带隙半导体与金属 - 气门导体 - 金属（MSM）结构相结合，非常需要深脉络膜（DUV）光电检测。然而，由于其作为载体供体和陷阱中心的双重作用，合成引起的半导体中的缺陷使MSM DUV光电探测器的合理设计变得复杂，从而导致响应时间和响应时间之间通常观察到的权衡。在这里，我们通过建立用于方向性载体传输的低缺陷扩散屏障来证明ε-GA2O3 MSM光电探测器中这两个参数的同时改进。 Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the ε-Ga2O3 MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 10^8, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >10^16 Jones and a decay time of 123 ms.组合的深度良好光谱和显微镜分析揭示了在晶格不匹配的界面附近存在一个广泛的缺陷区域，然后是更无缺陷的黑暗区域，而后者则是一个扩散屏障，可帮助前载载携带，以帮助实质增强光电轨道性能。这项工作揭示了半导体缺陷曲线在制造高性能MSM DUV光电遗传学方面的调整载体传输中的关键作用。
Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the rational design of MSM DUV photodetectors due to their dual role as carrier donors and trap centers, leading to a commonly observed trade-off between responsivity and response time. Here, we demonstrate a simultaneous improvement of these two parameters in ε-Ga2O3 MSM photodetectors by establishing a low-defect diffusion barrier for directional carrier transport. Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the ε-Ga2O3 MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 10^8, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >10^16 Jones and a decay time of 123 ms. Combined depth-profile spectroscopic and microscopic analysis reveals the existence of a broad defective region near the lattice-mismatched interface followed by a more defect-free dark region, while the latter one serves as a diffusion barrier to assist frontward carrier transport for substantially enhancing the photodetector performance. This work reveals the critical role of the semiconductor defect profile in tuning carrier transport for fabricating high-performance MSM DUV photodetectors.
