论文标题
与二维过渡金属二进制二色元的半学位接触的多尺度建模
Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor
论文作者
论文摘要
开发了一种多尺度仿真方法，以模拟半学与单层二维（2D）过渡金属二北核化（TMDC）半导体之间的接触传输特性。结果阐明了从量子传输的角度来看，半准和TMDC半导体接触之间接触性低的机制。模拟结果与最近的实验相比有利。此外，结果表明，通过工程化介电环境并将TMDC材料掺入<100 $ω$。$μ$ m，可以进一步降低二晶型MOS2接触的接触电阻。量子传输模拟表明有可能达到〜1 nm的超短接触传递长度，这可以允许接触尺寸的积极缩放。
A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a quantum transport perspective. The simulation results compare favorably with recent experiments. Furthermore, the results show that the contact resistance of a Bismuth-MoS2 contact can be further reduced by engineering the dielectric environment and doping the TMDC material to <100 $Ω$.$μ$m. The quantum transport simulation indicates the possibility to achieve an ultrashort contact transfer length of ~1 nm, which can allow aggressive scaling of the contact size.
