论文标题
在硅表面重叠的双脉冲辐射的干扰的影响
Effect of the interference in overlapped double-pulse irradiation at the silicon surface
论文作者
论文摘要
我们研究了在强烈的双重脉冲下硅的激发过程。我们与麦克斯韦方程一起使用了三温（电子，孔和晶格）模型（3TM）。我们通过有限差分时间域方法解决了麦克斯韦方程。当两个激光脉冲与建设性干扰重叠时，晶格温度和表面吸收能量显着增加。另一方面，破坏性干扰大大降低了激光激发的效率。平均而言，重叠的双脉冲将效率提高到大约两倍的两倍两倍。
We studied the excitation process of silicon under an intense double pulse. We employed the three-temperature (electron, hole, and lattice) model (3TM) together with Maxwell's equations. We solved Maxwell's equations by the finite-difference time-domain approach. The lattice temperature and absorbed energy at the surface increase significantly when the two laser pulses overlap with constructive interference. On the other hand, destructive interference substantially reduces the efficiency of laser excitation. On average, the overlapped double pulse increases the efficiency to about twice the distinct two-pulse case.
