论文标题
石墨烯晶体管的迁移率降解和接触电阻的提取方法
An extraction method for mobility degradation and contact resistance of graphene transistors
论文作者
论文摘要
固有的迁移率降解系数，接触电阻和石墨烯场现场效应晶体管（GFET）的跨导参数是通过考虑在电荷通道控制描述中采用迁移率降解效应的新型传输模型来提取不同技术的。通过考虑基于移动性降解的模型，通过将知名Y功能的概念应用于\ textIt {i-v}设备特性，可以实现以前提供的直接提取方法。该方法无论使用GATE设备架构，都可以使用。通过使用提取的参数，通过基础传输方程来实现制造设备的实验数据的准确描述。还提供了对此处提取的参数启用的通道电阻的评估。
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known Y-function to the \textit{I-V} device characteristics. The method works regardless the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has been also provided.
