论文标题
异质结构PT/CO/ALOX的工程，以增强Dyzaloshinskii-Moria相互作用
Engineering of Heterostructure Pt/Co/AlOx for the enhancement of Dyzaloshinskii-Moria interaction
论文作者
论文摘要
界面Dyzaloshinskii-Moria相互作用（DMI）有助于稳定手性结构域壁和磁性天空，这将促进新的磁性记忆和旋转的逻辑设备。界面DMI在垂直磁性的结构不对称重金属（HM） /铁磁（FM）多层系统中的研究非常重要，这是由于在存在DMI的情况下形成了手性磁纹理。在这里，我们通过改变生长后的退火时间和铝厚度，以PT/CO/CO/ALOX TRILAYER结构在PT/CO/ALOX TRILAYER结构中的钴 - 氧化铝界面对DMI的影响。为了量化DMI，我们采用了不对称结构域壁扩展，磁滞回路和自旋波光谱技术的磁光成像。我们进一步将钴氧化与低温大厅效应测量和X射线光电子光谱相关联。我们的结果强调了MRAM Technologies半导体温度过程窗口的磁性膜的表征，在该磁场对于设备性能至关重要。
The interfacial Dyzaloshinskii-Moria interaction (DMI) helps to stabilize chiral domain walls and magnetic skyrmions, which will facilitate new magnetic memories and spintronics logic devices. The study of interfacial DMI in perpendicularly magnetized structurally asymmetric heavy metal (HM) / ferromagnetic (FM) multilayer systems is of high importance due to the formation of chiral magnetic textures in the presence of DMI. Here, we report the impact of the cobalt oxidation at the cobalt -aluminum oxide interface in Pt/Co/AlOx trilayer structure on the DMI by varying the post-growth annealing time and Aluminum thickness. For quantifying DMI, we employed magneto-optical imaging of asymmetric domain wall expansion, hysteresis loop shift, and spin-wave spectroscopy techniques. We further correlated the Cobalt oxidation with low-temperature Hall effect measurements and X-ray photoelectron spectroscopy. Our results emphasize the characterization of magnetic films for MRAM technologies semiconductor temperature process window, where magnetic interaction will be critical for device performance.
