论文标题
Kagome超导体CSV3SB5中电荷密度波的载体注入和操纵
Carrier Injection and Manipulation of Charge-Density Wave in Kagome Superconductor CsV3Sb5
论文作者
论文摘要
Kagome金属AV3SB5（A = K，RB和CS）表现出与电荷密度波（CDW）共存的独特超导基态，而由于缺乏有效的载载式掺杂方法，这些特性如何受到载载掺杂的影响。在这里，我们通过CS剂量报告了对CSV3SB5的成功电子掺杂，如角度分辨光发射光谱可视化。我们发现，带有CS给药的电子掺杂以轨道选择的方式进行，其特征是SB 5PZ和V 3DXZ/YZ频段的电子填充显着增加，而V 3DXY/X2-Y2频段的相对不敏感性相对不敏感。通过监测M点围绕M点的CDW差距的温度演变，我们发现CDW可以被CS剂量完全杀死，同时将鞍点保持在v 3dxy/x2-Y2角色上几乎固定在费米水平上。目前的结果表明，多轨道效应对CDW的发生至关重要，并为操纵CDW和AV3SB5中的超导性提供了重要的一步。
Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to CsV3Sb5 by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb 5pz and V 3dxz/yz bands as opposed to relatively insensitive nature of the V 3dxy/x2-y2 bands. By monitoring the temperature evolution of the CDW gap around the M point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V 3dxy/x2-y2 character almost pinned at the Fermi level. The present result suggests a crucial role of multi-orbital effect to the occurrence of CDW, and provides an important step toward manipulating the CDW and superconductivity in AV3Sb5.
