论文标题
疾病的相互作用和氧化；
Interplay of the disorder and strain in gallium oxide
论文作者
论文摘要
离子辐照是一种有力的工具，可调节半导体的特性，尤其是氧化甲壳虫（GA2O3），这是一种有希望的超宽带隙半导体，表现出具有足够高应变/疾病水平的相位不稳定性。在本文中，我们通过比较原子和簇离子辐射以及原子离子共植物，观察到单斜\ b {eta} -Ga2O3单晶之间的疾病与应变之间的有趣相互作用。通过通道技术，X射线衍射和理论计算的组合获得的结果表明，该疾病在\ b {eta} -GA2O3中的积累表现出超线性行为，这是碰撞级联密度的函数。此外，可以通过改变近表面层中的疾病条件来设计植入区域的应变水平。结果可用于更好地理解\ b {eta} -GA2O3中的辐射效应，并暗示疾病/应变相互作用为维持GA2O3中理想的应变提供了额外的自由度，这可能适用于修改该材料中多态性过渡的速率。
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, x-ray diffraction and theoretical calculations show that the disorder accumulation in \b{eta}-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in \b{eta}-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.
