论文标题
从低温N型GAA中提取闪烁光的蒙特卡洛计算
Monte Carlo Calculations of the Extraction of Scintillation Light from Cryogenic N-type GaAs
论文作者
论文摘要
N型GAA在10K处的高闪烁光度令人惊讶，因为（1）折射率约为3.5，逃脱受到总内部反射的抑制，并且（2）在90K报告的窄梁实验中，每CM的几种红外报告红外吸收系数。本文介绍了蒙特卡洛计算，表明如果（1）（1）窄梁吸收几乎是所有光学散射，并且（2）绝对吸收系数低于每CM的0.1，则可以解释10K处的高光度。为一系列内部散射和绝对吸收系数模拟了16个表面反射器构型，这些构型可以指导设计的低温闪烁GAAS目标，以直接检测到暗物质。讨论部分提出了基于N型GAA的金属性质的可能的红外散射机制。附录A详细描述了Monte Carlo计划的步骤。附录B显示了狭窄的梁和整合球实验如何测量低温光学散射和绝对吸收系数。
The high scintillation luminosity of n-type GaAs at 10K is surprising because (1) with a refractive index of about 3.5, escape is inhibited by total internal reflection and (2) narrow-beam experiments at 90K report infrared absorption coefficients of several per cm. This paper presents Monte Carlo calculations showing that the high luminosity at 10K can be explained if (1) narrow-beam absorption is almost all optical scattering and (2) the absolute absorption coefficient is below 0.1 per cm. Sixteen surface reflector configurations are simulated for a range of internal scattering and absolute absorption coefficients, and these can guide the design of cryogenic scintillating GaAs targets for the direct detection of dark matter. The discussion section presents a possible infrared scattering mechanism based on the metallic nature of n-type GaAs. Appendix A describes the Monte Carlo program steps in detail. Appendix B shows how narrow-beam and integrating sphere experiments can measure the cryogenic optical scattering and absolute absorption coefficients.
