论文标题
通过CDS/CDSE，ALXGA1-XAS/GAAS和ALSB/INA的电子隧穿的能源有效质量依赖性
Energy effective mass dependence of electron tunneling through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
论文作者
论文摘要
通过使用统一传输矩阵方法研究了通过异质结构设备中屏障的电子隧穿。还已经检查了当前几年具有重大研究兴趣的不同半导体设备对电子传输系数对电子传输系数的影响。这样的对涉及ALXGA1-XAS/GAA，ALSB/INAS和CDS/CDSE量子屏障，其尺寸从20 nm降低到5nm，以观察隧道特性如何受到缩放的影响。井和屏障区域中的有效电子质量通常随成分材料而变化。已经表明，由于耦合，传输系数发生了显着更改。通过质量不连续性指标，已经评估了电子能量的有效质量依赖性传输系数。每对量子结构的电子传输系数与其电子能量的变化绘制，并标准化为其势能。此处获得的共振状态将有益于设计探测器，光过滤器，光子转换设备以及其他光电子和光子设备。
Tunneling of electrons through the barriers in heterostructures devices is investigated by using the unified Transfer Matrix Method. The effect of barrier width on electron transmission coefficients has also been examined for different pairs of semiconductor devices of significant research interest in current years. Such Pairs involve AlxGa1-xAs/GaAs, AlSb/InAs, and CdS/CdSe quantum barriers with varying dimensions reduced from 20 nm to 5nm to observe how tunneling properties are affected by scaling. The effective electron masses in the well and barrier regions typically vary with constituent materials. It has been shown that the transmission coefficients are significantly changed due to the coupling. The effective mass-dependent transmission coefficients for electron energy have been evaluated in terms of the mass discontinuity metrics. The electron transmission coefficients for each pair of quantum structures are plotted with the variation of its electron energy, normalized to its potential energy. The resonant state obtained here will be beneficial for designing detectors, optical filters, photonic-switching devices and other optoelectronic and photonic devices.
