论文标题
在应变工程WSE2/NIPS3异质结构中,接近诱导的手性量子光生产生
Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe2/NiPS3 Heterostructures
论文作者
论文摘要
量子光发射器(QE)(QE)能够生成明确定义的圆极化的单个光子可以实现非近代单光子设备和确定性的自旋光子接口,这对于实现复杂的量子网络至关重要。迄今为止,通过应用强烈的外部磁场电气/光学注入自旋极化载体/激子或与复杂的光子/元结构的耦合,已经实现了这种手性量子光的发射。在这里,我们报告了在零外部磁场的单层WSE2 -NIPS3异质结构中产生的QE的高性手性单光子的自由空间生成。这些QE在760-800 nm范围内发射,圆形极化和单个光子纯度分别高达0.71和80%,与泵激光极化无关。 QE是通过将扫描探针显微镜尖端按在包含WSE2单层和〜50 nm厚层的抗铁磁(AFM)绝缘子NIPS nips nips nips的二维异质结构中来确定性产生的。依赖温度的磁光发光研究表明,手性量子光发射由WSE2单层中的局部激子与NIPS3中AFM缺陷的平面磁化磁化强度之间的磁性接近性相互作用产生,这两者都是由纳米级别从纳米级数中的应变场共同定位的。
Quantum light emitters (QEs) capable of generating single photons of well-defined circular polarization could enable non-reciprocal single photon devices and deterministic spin-photon interfaces critical for realizing complex quantum networks. To date, emission of such chiral quantum light has been achieved via the application of intense external magnetic field electrical/optical injection of spin polarized carriers/excitons, or coupling with complex photonic/meta-structures. Here we report free-space generation of highly chiral single photons from QEs created in monolayer WSe2 - NiPS3 heterostructures at zero external magnetic field. These QEs emit in the 760-800 nm range with a degree of circular polarization and single photon purity as high as 0.71 and 80% respectively, independent of pump laser polarization. QEs are deterministically created by pressing a scanning probe microscope tip into a two-dimensional heterostructure comprising a WSe2 monolayer and a ~50 nm thick layer of the antiferromagnetic (AFM) insulator NiPS3. Temperature dependent magneto-photoluminescence studies indicate that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of AFM defects in NiPS3, both of which are co-localized by the strain field arising from the nanoscale indentations.