论文标题
辐射硬3D硅像素传感器用于HL-LHC的Atlas检测器
Radiation Hard 3D Silicon Pixel Sensors for use in the ATLAS Detector at the HL-LHC
论文作者
论文摘要
高光度LHC（HL-LHC）升级要求ATLAS检测器计划的内部跟踪器（ITK）耐受极高的辐射剂量。具体而言，像素系统的最内向部分将必须承受辐射通力以上$ 1 \ times10^{16} $ $ n_ {eq} cm^{ - 2} $。与传统的平面像素传感器相比，新型的3D硅像素传感器具有优异的辐射公差，因此是ITK最内向部分的出色候选者。本文介绍了对像素尺寸的3D像素传感器$ 50 \ times 50 $ $μm^2 $安装在RD53A原型读数芯片上。在描述了设计和制造步骤的描述后，提出了针对未经辐照和重辐射的传感器的测试束结果。对于以垂直入射率传递的颗粒，显示出暴露于$ 1 \ times10^{16} $ $ $ $ n_ {eq} cm^{ - 2} $的平均效率以上的平均效率超过96％。
The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above $1\times10^{16}$ $n_{eq}cm^{-2}$. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size $50 \times 50$ $μm^2$ mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of $1\times10^{16}$ $n_{eq}cm^{-2}$ when biased to 80 $V$.
