论文标题

Quasiparticle的真实空间表示$ GW $ Energy及其用于缺陷计算的应用

Real space representation of the quasiparticle self-consistent $GW$ self-energy and its application to defect calculations

论文作者

Dernek, Ozan, Skachkov, Dmitry, Lambrecht, Walter R. L., van Schilfgaarde, Mark

论文摘要

Quasiparticle自洽QS $ GW $方法结合了从其Kohn-Sham密度功能理论(DFT)特征值对Quasiparticle Energies的校正,通常是通过能量独立的和遗传学的自我能量矩阵来校正,通常以DFT EIGENSTATES的基础为基础。通过将它们扩展到以原子为中心的基础集中(特别是在这里是线性的松饼键轨道),可以实现自我能源校正的真实空间表示形式。我们表明,此表示相对较短。这提供了新的机会,可以通过剪切方法从系统的某些部分构建复杂系统的自我能源。特别是在大型超级电池中代表的点缺陷,可以从宿主的宿主和较小的含有细胞的缺陷构建。可以简单地根据原始单元的$ GW $计算来构建周期宿主的自我能源。我们显示了GAAS中AS $ _ \ MATHRM {GA} $的情况,表明缺陷零件已经可以由最小的8个原子单元格很好地表示,并允许我们为64个单元格构建与直接QS $ GW $计算的64个单元的自我能源。使用这种方法对更大的216原子细胞显示出缺陷带接近孤立的缺陷水平。该计算还允许识别第二个缺陷带,该缺陷带在最低传导带附近显示为共振。提取的缺陷水平的结果与Green的功能计算非常吻合,对于孤立的缺陷和实验数据。

The quasiparticle self-consistent QS$GW$ approach incorporates the corrections of the quasiparticle energies from their Kohn-Sham density functional theory (DFT) eigenvalues by means of an energy independent and Hermitian self-energy matrix usually given in the basis set of the DFT eigenstates. By expanding these into an atom-centered basis set (specifically here the linearized muffin-tin orbitals) a real space representation of the self-energy corrections becomes possible. We show that this representation is relatively short-ranged. This offers new opportunities to construct the self-energy of a complex system from parts of the system by a cut-and-paste method. Specifically for a point defect, represented in a large supercell, the self-eneregy can be constructed from those of the host and a smaller defect containing cell. The self-energy of the periodic host can be constructed simply from a $GW$ calculation for the primitive cell. We show for the case of the As$_\mathrm{Ga}$ in GaAs that the defect part can already be well represented by a minimal 8 atom cell and allows us to construct the self-energy for a 64 cell in good agreement with direct QS$GW$ calculations for the large cell. Using this approach to an even larger 216 atom cell shows the defect band approaches an isolated defect level. The calculations also allow to identify a second defect band which appears as a resonance near the conduction band minimum. The results on the extracted defect levels agree well with Green's function calculations for an isolated defect and with experimental data.

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