论文标题
Laopbis $ _ {3} $和LA $ _ {2} $ o $ $ $ _ {2} $ _ {2} $ bi $ _ {3} $ ags $ _ {6} $ _ {6} $的压力调整本地化和超导性的定位和超导性
Pressure tuning of localization and superconductivity in LaOPbBiS$_{3}$ and La$_{2}$O$_{2}$Bi$_{3}$AgS$_{6}$
论文作者
论文摘要
我们报告了压力对四层型二型二甲状腺素半导体半导体的电气传输特性的影响。在这两种化合物中，在更绝缘状态中与异常的半导体样行为随着压力的增加而逐渐抑制，而超导性则会逐渐抑制。所获得的相图与常规电荷密度波和超导性之间的相互作用形成鲜明对比，表明超导性的增强是由于该疾病附近的定位阈值所致。这些结果表明，在四层型二甲状腺硫化剂中，局部疾病的压力调节为研究障碍与超导性之间的相互作用提供了有吸引力的机会。
We report the effect of pressure on the electrical transport properties of the four-layer-type bismuth chalcogenide semiconductors LaOPbBiS$_{3}$ and La$_{2}$O$_{2}$Bi$_{3}$AgS$_{6}$ and present the discovery of a pressure-induced superconductivity. In both compounds, the semiconductorlike behavior concomitant with an anomaly in the more insulating state is gradually suppressed with increasing pressure while the superconductivity develops. The obtained phase diagrams, in sharp contrast with the interplay between the conventional charge density waves and superconductivity, suggest that the enhancement of the superconductivity is due to the disorder near the localization threshold. These results indicate that pressure tuning of the local disorder in four-layer-type bismuth chalcogenides provides an attractive opportunity to study the interplay between disorder and superconductivity.
