论文标题
双晶体四极杆绝缘子中的拓扑缺陷取代电荷
Topological defects in a double-mirror quadrupole insulator displace diverging charge
论文作者
论文摘要
我们表明，四极杆绝缘子中的拓扑缺陷不会容纳量化的分数电荷，这与他们的Wannier表示的指示相反。特别是，我们基于参数缺陷和披露的阻尼器表示测试电荷量化假设。按照期望，我们发现本地电荷密度衰减为$ \ sim 1/r^2 $，距离距离，导致缺陷充电。我们将sublattice对称性而不是高阶拓扑确定为先前报道的电荷量化的起源。
We show that topological defects in quadrupole insulators do not host quantized fractional charges, contrary to what their Wannier representation indicates. In particular, we test the charge quantization hypothesis based on the Wannier representation of a parametric defect and a disclination. Against the expectations, we find that the local charge density decays as $\sim 1/r^2$ with distance, leading to a diverging defect charge. We identify sublattice symmetry and not higher order topology as the origin of the previously reported charge quantization.
