论文标题
使用接近索引匹配的固体浸入镜头从氮化炮颜色中心增强的光收集
Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
论文作者
论文摘要
在宽带gap化合物半导体中，氮化岩是最广泛的材料，因为它在固态照明和高速/高功率电子工业中的盛行。现在众所周知，GAN是少数几种在室温下发出量子光的颜色中心的少数材料之一。在本文中，我们报告了半极氮化岩底物的鲜艳中心，并在近红外的室温下排放。我们表明，与半导体相匹配的索引近的半球固体浸入式透镜可用于提高光子收集效率$ 4.3 \ pm0.1 $，同时通过等于镜头折射率的侧面分辨率提高了横向分辨率。
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate, emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of $4.3\pm0.1$, whilst improving the lateral resolution by a factor equal to the refractive index of the lens.
