论文标题
混合半导体 - 驱动器岛中的准颗粒中毒的静电控制
Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island
论文作者
论文摘要
超导器件的性能通常会因不受控制的外观和准粒子的消失而降低，这一过程称为中毒。我们以固定屏障的形式表明了静态隧道的静电控制，以固定的障碍物进入INAS/Al Hybrid Nanowire的库仑岛。高带宽电荷传感用于监测该岛跨库仑封锁峰的电荷占用率，那里的隧道速度最大，而库仑山谷则没有隧道。对于具有固定的正常状态电阻的屏障，静电门在峰值的隧道速率上变化了两个数量级，我们将其归因于岛上诱导的超导间隙的大小和柔软度的门依赖性，并通过单独的密度密度 - 态态度来证实。还研究了隧道率的温度和磁场依赖性。
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.
