论文标题
部分可观测时空混沌系统的无模型预测
Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose
论文作者
论文摘要
使用标准和封闭的布局设备的晶体管和电路水平和电路水平，在晶体管和电路水平上进行了0.25 UM硅CMOS技术的辐射响应。设备级表征显示阈值电压的变化小于170 mV，并且单个NMOSFET和PMOSFET设备的泄漏电流变化小于1 Na，总剂量为100 krad（SIO2）。电路水平的电源电流的增加小于5％，这与状态外晶体管泄漏电流的较小变化一致。该技术在大型强子对撞机的Atlas实验的电子设备中具有良好的特征。
The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change of less than 170 mV and leakage current change of less than 1 nA for individual nMOSFET and pMOSFET devices at a total dose of 100 krad(SiO2). The increase in power supply current at the circuit level was less than 5%, consistent with the small change in off-state transistor leakage current. The technology exhibits good characteristics for use in the electronics of the ATLAS experiment at the Large Hadron Collider.
