论文标题
多发激激体生成和巨大的外部量子效率$ _2 $
Multiple exciton generation and giant external quantum efficiency in VO$_2$
论文作者
论文摘要
多个激子产生（MEG）是半导体纳米晶体和量子点中广泛研究的现象，其中光激发的载体通过产生其他电子孔对来放松。在这里，我们介绍了对MEG的第一个实验观察，并在Vo $ _2 $中引起了巨大的外部量子效率（EQE），这是一个非常相关的原型。通过使用〜4.2倍带gap的光激发（LAMDA〜488 nm），在室温下，EQE的eqe在vo $ _2 $中提高了〜170％。温度依赖性实验表现出MEG与电子相关强度之间的直接关系，并表明可以在不久的将来以高性能太阳能细胞研究中的大量强相关材料中利用这种现象。
Multiple exciton generation (MEG) is a widely studied phenomenon in semiconductor nanocrystals and quantum dots wherein photo-excited carriers relax by generating additional electron-hole pairs. Here, we present the first experimental observation of MEG and the same leading to giant external quantum efficiency (EQE) in VO$_2$, a prototype strongly correlated material. By employing a photoexcitation (lamda ~ 488 nm) of ~ 4.2 times the bandgap, EQE in VO$_2$ is enhanced up to ~ 170 % at room temperature. Temperature dependent experiments exhibit the direct relation between MEG and strength of electron correlation and suggest that such a phenomenon could be exploited in large number of strongly correlated materials for high performance solar cell research in near future.
