论文标题

负化学压力对CU0.5IR1-XZRXTE2的超导性和电荷密度波的负面影响

Negative Chemical Pressure Effect on Superconductivity and Charge Density Wave of Cu0.5Ir1-xZrxTe2

论文作者

Zeng, Lingyong, Ji, Yi, Yu, Dongpeng, Guo, Shu, He, Yiyi, Li, Kuan, Huang, Yanhao, Zhang, Chao, Yu, Peifeng, Luo, Shaojuan, Wang, Huichao, Luo, Huixia

论文摘要

这项研究证明了Cu0.5IR1-XZRXTE2系统的设计和合成,通过将IR与ZR作为负化学压力的部分取代。随着ZR的掺杂,细胞参数显着扩展,表示有效的负化学压力。实验结果发现了证据表明,可以观察到可以观察到在2.80 K峰值的IR和经典的圆顶形状TC(X)的微妙ZR替换和经典的圆顶形状TC(X)立即消除了电荷密度波(CDW)的顺序。最佳CU0.5IR0.95ZR0.05TE2化合物是BCS型超导体,并且展示了II型SC。但是,高ZR浓度会引起障碍,从而引起CDW顺序的重新出现。本研究表明,CU0.5IR1-XZRXTE2系统可能会为进一步了解过渡金属二核苷的多个电子阶提供一个新的平台。

This study demonstrates the design and synthesis of Cu0.5Ir1-xZrxTe2 system by partial substitution of Ir with Zr acting as a negative chemical pressure. With the doping of Zr, the cell parameters significantly expand, signifying an effective negative chemical pressure. The experimental results found evidence that the charge density wave (CDW)-like order is immediately quenched by subtle Zr substitution for Ir and a classical dome-shape Tc(x) that peaked at 2.80 K can be observed. The optimal Cu0.5Ir0.95Zr0.05Te2 compound is a BCS-type superconductor and exhibits type-II SC. However, high Zr concentration can provoke disorder, inducing the reappearance of CDW order. The present study shows that the Cu0.5Ir1-xZrxTe2 system may provide a new platform for further understanding of multiple electronic orders in transition metal dichalcogenides.

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