论文标题
表面钝化和氧化物封装，以改善靠近表面的单个GAAS量子点的光学特性
Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface
论文作者
论文摘要
通过液滴蚀刻生长的外延GAAS量子点最近显示出极好的特性作为单个光子和纠缠光子对的来源。在某些纳米仪结构中的整合需要小于100 nm的地面距离。这需要表面钝化方案，这对于降低表面状态的密度可能很有用。为了解决这个问题，用电介质叠加剂用作封装的硫钝化用于表面为40 nm的QD距离，从而导致发射线宽的部分恢复到散装值以及光致发光强度的增加。
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.
