论文标题

范德华化合物Aute2Br的关键拓扑和压力诱导的超导性

Critical topology and pressure-induced superconductivity in the van der Waals compound AuTe2Br

论文作者

Cheng, Erjian, Shi, Xianbiao, Yan, Limin, Huang, Tianheng, Liu, Fengliang, Ma, Wenlong, Wang, Zeji, Jia, Shuang, Sun, Jian, Zhao, Weiwei, Yang, Wenge, Xu, Yang, Li, Shiyan

论文摘要

在过去十年中,关于量子自旋效应和拓扑绝缘子的研究构成了拓扑材料研究活动的序言。与错综复杂的量子井相比,三维弱拓扑绝缘子为量子自旋效应提供了自然途径,这是由于它们之间的绝热连接,一堆量子自旋霍尔绝缘子,以及剥落与范德尔·瓦尔瓦尔斯类型结构相关的样品方便的便利性。尽管有这些优势,但弱拓扑绝缘子的理论预测和实验鉴定仍然很少。在这里,根据第一原理的计算,我们表明Aute2BR位于强拓扑绝缘状态和弱拓扑隔离状态之间的边界。更有趣的是,Aute2BR的临界拓扑一直持续到施加的压力约为15.4 GPa,然后在结构相变,并伴随着电子拓扑的变化和超导性的发作。我们的结果将Aute2BR作为弱拓扑绝缘子的新候选者建立,有可能实现物质的其他各种拓扑阶段。

The study on quantum spin Hall effect and topological insulators formed the prologue to the surge of research activities in topological materials in the past decade. Compared to intricately engineered quantum wells, three-dimensional weak topological insulators provide a natural route to the quantum spin Hall effect, due to the adiabatic connection between them and a stack of quantum spin Hall insulators, and the convenience in exfoliation of samples associated with their van der Waals-type structure. Despite these advantages, both theoretical prediction and experimental identification of weak topological insulators remain scarce. Here, based on first-principles calculations, we show that AuTe2Br locates at the boundary between a strong and a weak topological insulating state. More interestingly, the critical topology of AuTe2Br persists up to an applied pressure of ~ 15.4 GPa before a structural phase transition accompanied by a change of electronic topology and the onset of superconductivity. Our results establish AuTe2Br as a new candidate for weak topological insulators with the potential to realize various other topological phases of matter.

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