论文标题
掺杂引起的非马克维亚干扰导致单层WSE $ _2 $中的激发线宽扩展
Doping-induced non-Markovian interference causes excitonic linewidth broadening in monolayer WSe$_2$
论文作者
论文摘要
在原子上薄的半导体（如单层WSE $ _2 $）中，强烈的库仑相互作用不仅会紧密地绑定激子，而且使它们的光学特性非常明智。通过利用基于激子Heisenberg运动方程的微观理论，我们系统地确定了掺杂对激子宽度，线路和振荡器强度的影响。我们计算了TRION共振，并证明了激子与三位数连续体的库仑耦合会产生非马克维亚干扰，由于时间障碍，该耦合会构建一个阶段，从而构成了不对称的激子线形状的形状和增加的激子线宽。我们计算出的激子和TRION线宽，线路和振荡器强度的兴奋剂依赖性解释了最近的实验。获得的见解提供了掺杂原子薄的半导体光学指纹的微观起源。
Strong Coulomb interactions in atomically thin semiconductors like monolayer WSe$_2$ induce not only tightly bound excitons, but also make their optical properties very sensible to doping. By utilizing a microscopic theory based on the excitonic Heisenberg equations of motion, we systematically determine the influence of doping on the excitonic linewidth, lineshift, and oscillator strength. We calculate trion resonances and demonstrate that the Coulomb coupling of excitons to the trionic continuum generates a non-Markovian interference, which, due to a time retardation, builds up a phase responsible for asymmetric exciton line shapes and increased excitonic linewidths. Our calculated doping dependence of exciton and trion linewidths, lineshifts, and oscillator strengths explains recent experiments. The gained insights provide the microscopic origin of the optical fingerprint of doped atomically thin semiconductors.
