论文标题
半手相scptbi中手性磁异常的磁转移特征
Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi
论文作者
论文摘要
Scptbi的磁转运性能的研究同时揭示了：对纵向磁磁性，平面霍尔效应以及纵向磁磁性的明显角度变窄（手性磁异常的三个标志（Weyl Nodes之间的泵浦电荷泵送），具有独特的半学性质的纵向较窄，对纵向磁磁性的明显缩小。电子结构计算表明，诸如反式和空缺之类的结构缺陷在Scptbi的费米水平上带来了大量状态，表明它是一个半学的，不是零间隙的半导体，如前所述。这与SCPTBI中的电阻率一致，没有显示半导体的特征。此外，在0.7K以下，我们观察到超导过渡的发作，电阻率完全消失了0.23K。
Study of magnetotransport properties of ScPtBi revealed simultaneously: a negative contribution to the longitudinal magnetoresistance, the planar Hall effect, and distinct angular narrowing of the longitudinal magnetoresistance { three hallmarks of chiral magnetic anomaly (pumping of axial charge between Weyl nodes), a distinct property of topological semimetals. Electronic structure calculations show that structural defects, such as antisites and vacancies, bring substantial density of states at the Fermi level of ScPtBi, indicating that it is a semimetal, not a zero-gap semiconductor, as predicted earlier. This is in accord with electrical resistivity in ScPtBi, showing no characteristics of semiconductor. Moreover, below 0.7K we observed an onset of a superconducting transition, with the resistivity disappearing completely below 0.23 K.
