论文标题

音调晶体中的混合阶拓扑绝缘子

Hybrid-order topological insulators in a phononic crystal

论文作者

Yang, Yating, Lu, Jiuyang, Yan, Mou, Huang, Xueqin, Deng, Weiyin, Liu, Zhengyou

论文摘要

拓扑阶段,包括常规的一阶和高阶拓扑绝缘子和半学,在凝结的物理学和材料科学领域中出现了一个繁荣的话题。通常,拓扑绝缘子的特征是固定阶拓扑不变,并且表现出相关的散装对应关系。在这里,我们在双层音响晶体中实现了一种新型的拓扑绝缘子,该晶体晶体同时托管了一阶和二阶拓扑结构,此处称为混合级拓扑绝缘子。一维无间隙的螺旋边缘状态,零维角状态在同一系统中共存。新的杂种拓扑阶段可能会在拓扑声学设备中产生新的应用。

Topological phases, including the conventional first-order and higher-order topological insulators and semimetals, have emerged as a thriving topic in the fields of condensed-matter physics and material science. Usually, a topological insulator is characterized by a fixed order topological invariant and exhibits associated bulk-boundary correspondence. Here, we realize a new type of topological insulator in a bilayer phononic crystal, which hosts simultaneously the first-order and second-order topologies, referred here as the hybrid-order topological insulator. The one-dimensional gapless helical edge states, and zero-dimensional corner states coexist in the same system. The new hybrid-order topological phase may produce novel applications in topological acoustic devices.

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