论文标题

在无扩散的马氏体相变的SNSE中切换铁电性

Switching ferroelectricity in SnSe across diffusionless martensitic phase transition

论文作者

Orlova, N. N., Timonina, A. V., Kolesnikov, N. N., Deviatov, E. V.

论文摘要

我们实验研究了混合结构的传输特性,该特性由一个薄的单晶snse薄片组成,顶部是5〜 $ $ m $ m的au铅。该结构最初处于高电导状态,而由于样品的焦干加热,可以将其切换到高电流的低电导态,这应确定为$α$ -PNMA $ -PNMA $ - $β$-β$-β$ -CMCM $ cmcm $ diffusion diffusionals diffusionals diffusionals diffusionals snse中的无脑膜转移。对于高导体状态,在低偏差处$ di/dv(v)$曲线中存在明显的滞后,因此样品电导取决于应用偏置变化的符号。这种滞后行为反映了铁电snSE相中的额外极化电流引起的缓慢弛豫,我们通过直接测量时间依赖性的松弛曲线来确认。相比之下,我们没有观察到猝灭$β$ -CMCM $低导电相的明显放松或低偏置滞后。因此,可以通过可控的$α$ -PNMA $ - $β$ -CMCM $相位过渡来通过混合SNSE结构来打开或关闭铁电行为。该结果对于非易失性记忆发展也很重要,例如神经形态计算或人工智能和现代电子中的其他应用的相变内存。

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$μ$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $α$-$Pnma$ -- $β$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $β$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $α$-$Pnma$ -- $β$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.

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