论文标题
WSE $ _2 $现场效应晶体管作为2D金属绝缘体过渡的平台，低温2D/2D/2D
Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition
论文作者
论文摘要
我们报告了具有2D/2D低温欧姆的接触仪的六型六硝酸盐（HBN）的制造，作为研究二维（2D）金属绝不能构造物转换的平台。我们证明，WSE $ _2 $设备的欧姆行为降至0.25 K，并且以低的激发电压为止，以避免当前加热效果。此外，在理想的霍尔杆几何形状中，高质量的HBN封装的WSE $ _2 $设备使我们能够准确地确定载体密度。温度（$ t $）和密度（$ n_s $）的测量值$σ（t，n_s）$的依赖性证明了与金属 - 绝缘体量子相变相一致的缩放行为，但还存在由电子电子相互作用驱动的，但在其中也存在障碍诱导的局部磁矩。我们的发现为使用相同的接触工程进行进一步研究2D过渡金属二进制基因源的基本量子机械性能铺平了道路。
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multi-terminal WSe$_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe$_2$ devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe$_2$ devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature ($T$) and density ($n_s$) dependence of the conductivity $σ(T,n_s)$ demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions, but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
