论文标题

在参数化$ ϕ^4 $型号中,扭结 - 安替金克散射引起的呼吸绑定状态和oscillons

Kink-antikink scattering-induced breathing bound states and oscillons in a parametrized $ϕ^4$ model

论文作者

Nzoupe, F. Naha, Dikandé, Alain M., Tchawoua, C.

论文摘要

最近的研究强调了与标准$ ϕ^4 $字段有关的标量场模型的形状可变形性的重要作用,可以在控制特定类型的呼吸结合状态所谓的oscillons的生产方面发挥作用。在宇宙学的背景下,俄亥俄州的内置机制表明,它们可以影响标量超轻色暗物质的标准图片。在目前的工作中,扭结散射是在Bistable系统的参数化模型中进行了研究,该模型承认经典的$ ϕ^4 $场作为渐近极限,重点是形成长期寿命的低振幅几乎几乎是真空周围标量场的谐波振荡。参数化模型的特征是双孔电势具有形状变形的参数,该参数仅改变电势壁的陡度,从而使电势障碍的平坦度不受影响,从而使两个退化的最小值和屏障高度不受影响。发现可变形性参数的变化促进了扭结散射电位中的几种额外的振动模式,从而导致在扭结 - 安替克散射中抑制两弹性窗口和振荡器的产生。数值结果表明,具有平坦障碍物的特征的潜在屏障的呼吸道是在双孔系统中产生oscillon的主要决定因素。

Recent studies have emphasized the important role that a shape deformability of scalar-field models pertaining to the same class with the standard $ϕ^4$ field, can play in controlling the production of a specific type of breathing bound states so-called oscillons. In the context of cosmology, the built-in mechanism of oscillons suggests that they can affect the standard picture of scalar ultra-light dark matter. In the present work kink scatterings are investigated in a parametrized model of bistable system admitting the classical $ϕ^4$ field as an asymptotic limit, with focus on the formation of long-lived low-amplitude almost harmonic oscillations of the scalar field around a vacuum. The parametrized model is characterized by a double-well potential with a shape-deformation parameter that changes only the steepness of the potential walls, and hence the flatness of the hump of the potential barrier, leaving unaffected the two degenerate minima and the barrier height. It is found that the variation of the deformability parameter promotes several additional vibrational modes in the kink-phonon scattering potential, leading to suppression of the two-bounce windows in kink-antikink scatterings and the production of oscillons. Numerical results suggest that the anharmonicity of the potential barrier, characterized by a flat barrier hump, is the main determinant factor for the production of oscillons in double-well systems.

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