论文标题
压力对AECD2AS2中频段反转的影响
Pressure Effect on Band Inversion in AECd2As2
论文作者
论文摘要
最近的研究预测,磁EUCD2AS2可以根据其磁性顺序(包括一对Weyl点)托管几个不同的拓扑状态。在这里,我们报告了通过密度函数理论计算研究的非磁性类似物AECD2AS2(AE = CA,SR,BA)中压力引起的散装特性和频带反转。在环境压力下,我们发现这些化合物是狭窄的带隙半导体,与实验一致。带隙的尺寸取决于AE系列中的离子性增加,这倾向于增加带隙,以及较大的最近的邻居CD-AS距离增加原子尺寸的距离可以减小带隙,因为导出带边缘是一个反键入状态,主要从CD 5S轨道轨道轨道轨道衍生而成。这两种竞争效应的组合导致在AE系列中频带隙大小的非单调变化,而SRCD2AS2在这三种化合物中具有最小的带隙。负压的应用减少了该带隙,并导致沿$γ$ -A方向的CD 5S和4p轨道之间的频带反转,以诱导一对Dirac点。然后,通过在(10-10)表面上找到封闭的费米弧来确认狄拉克点的拓扑性质。
Recent studies have predicted that magnetic EuCd2As2 can host several different topological states depending on its magnetic order, including a single pair of Weyl points. Here we report on the bulk properties and band inversion induced by pressure in the non-magnetic analogs AECd2As2 (AE = Ca, Sr, Ba) as studied with density functional theory calculations. Under ambient pressure we find these compounds are narrow band gap semiconductors, in agreement with experiment. The size of the band gap is dictated by both the increasing ionicity across the AE series which tends to increase the band gap, as well as the larger nearest neighbor Cd-As distance from increasing atomic size which can decrease the band gap because the conduction band edge is an anti-bonding state derived mostly from Cd 5s orbitals. The combination of these two competing effects results in a non-monotonic change of the band gap size across the AE series with SrCd2As2 having the smallest band gap among the three compounds. The application of negative pressure reduces this band gap and causes the band inversion between the Cd 5s and As 4p orbitals along the $Γ$-A direction to induce a pair of Dirac points. The topological nature of the Dirac points is then confirmed by finding the closed Fermi arcs on the (10-10) surface.