论文标题
了解2D异质结构FET中的界面属性
Understanding interface properties in 2D heterostructure FETs
论文作者
论文摘要
自从石墨烯与散装石墨上的基板上分离出来以来，已经过去了15年。在此期间，已经实现了具有内在带隙的2D层次材料。尽管已经报道了其基本物理和应用的许多令人兴奋的结果，但对未来集成电路的2D电子设备应用的讨论仍基于对2D材料理想拥有的固有高属性的期望。这篇评论文章的重点是Gate Stack属性，该属性是现场效应晶体管中最重要的构件之一。从将2D/SIO2界面属性与常规SIO2/SI界面属性进行比较开始，讨论了双层石墨烯和MOS2 FET的GATE堆栈性能研究的最新进展。特别是，强调了2D异质结构具有H-BN的2D绝缘子的优势和缺点。这篇综述可能会提供控制2D异界面属性的概念和实验方法。
Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO2 interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS2 FETs are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator of h-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.
