论文标题
范德华磁铁磁铁Fe $ _5 $ gete $ _2 $中的门控制磁相变
Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$
论文作者
论文摘要
磁性范德华（VDW）材料，包括铁磁铁（FM）和抗铁磁铁（AFM），已访问二维（2D）极限的磁性研究，并最近引起了广泛的兴趣。但是，它们中的大多数是半导体或绝缘的，并且VDW巡回磁铁，尤其是VDW巡回AFM非常罕见。在这里，我们研究了VDW行程磁铁Fe $ _5 $ gete $ _2 $（f5gt）的异常大厅效应，各种厚度降至6.8 nm（两个单元）。尽管在薄层F5GT中具有强大的铁磁基态，但我们表明，质子栅极实现的电子掺杂最终可以诱导从FM到AFM的磁相变。 F5GT中抗铁磁相的实现突出了其在高温抗铁磁VDW设备和异质结构中的有希望的应用。
Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron doping implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.
