论文标题

由于介质设备中的Anderson灾难引起的热量产生

Heat generation due to the Anderson catastrophe in mesoscopic devices

论文作者

Lebedev, A. V., Vinokur, V. M.

论文摘要

安德森(Anderson)的正交性灾难(AOC)定理确定,多体效率系统的基态在散射潜力的同一系统的基态上是渐近的,因此原始和新的接地状态与系统尺寸的零衰减之间的重叠。我们采用AOC来描述互补的金属氧化物 - 氧化型晶体管中的热量产量。我们发现,晶体管中释放的热量包括两个不同的组件,这是由于高电导率和低电导率方案之间切换时电子散射矩阵的散射矩阵而变化,因此在应用电压下伴随电子传输的耗散和纯粹的量子机械AOC部分贡献。我们计算AOC诱导的热量产生,我们称之为开关热。

Anderson's orthogonality catastrophe (AOC) theorem establishes that the ground state of the many-body fermion system is asymptotically orthogonal to the ground state of the same system perturbed by a scattering potential, so that the overlap between the original and new ground states decays to zero with the system size. We adopt the AOC for a description of heat production in a complementary metal-oxide-semiconductor (CMOS) transistor. We find that the heat released in the transistor comprises two distinct components, contribution from the dissipation accompanying electron transmission under the applied voltage and purely quantum-mechanical AOC part due to the change in scattering matrix for electrons upon switching between high and low conductance regimes. We calculate the AOC-induced heat production, which we call switching heat.

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