论文标题
排队的抗抗铁磁MN单层中的域墙
Domain Walls in a Row-Wise Antiferromagnetic Mn Monolayer
论文作者
论文摘要
我们研究了使用自旋偏振STM,原子操纵和自旋动力学模拟的RE(0001)上单个FCC MN层中的磁性域壁。行明抗铁磁(1q)状态的低对称性导致了一种新型的域壁,该域壁通过瞬态2Q状态连接旋转1q域,具有特征性的90 $^\ circ $ circ $角度,相邻磁矩之间。域壁的性质取决于其方向和大约2 nm的宽度本质上是由于海森堡和高阶交换相互作用的平衡而产生的。原子操作允许具有原子自旋分辨率以及域壁定位的结构壁成像,我们证明了移动原子的力是对1q域上的各向异性的。
We investigate magnetic domain walls in a single fcc Mn layer on Re(0001) employing spin-polarized STM, atom manipulation, and spin dynamics simulations. The low symmetry of the row-wise antiferromagnetic (1Q) state leads to a new type of domain wall which connects rotational 1Q domains by a transient 2Q state with characteristic 90$^\circ$ angles between neighboring magnetic moments. The domain wall properties depend on their orientation and their width of about 2 nm essentially results from a balance of Heisenberg and higher-order exchange interactions. Atom manipulation allows domain wall imaging with atomic spin-resolution, as well as domain wall positioning, and we demonstrate that the force to move an atom is anisotropic on the 1Q domain.